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| 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features http://onsemi.com * Low Collector-Emitter Saturation Voltage - * * * * VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain - hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product - ft = 4.0 MHz (min) at IC = 1.0 Adc Pb-Free Packages are Available* 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 VOLTS, 200 WATTS MAXIMUM RATINGS (Note 1) Rating TO-204AA (TO-3) CASE 1-07 STYLE 1 II II I II IIIIIIIIIIIIIIIIIII I II I II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIII I IIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II I I I II IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIII II I I I II IIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II II I I I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII Symbol VCEO Value 60 80 60 80 Unit Vdc Collector-Emitter Voltage 2N5883, 2N5885 2N5884, 2N5886 Collector-Base Voltage 2N5883, 2N5885 2N5884, 2N5886 VCB Vdc Emitter-Base Voltage Collector Current - Continuous Peak Base Current VEB IC 5.0 25 50 Vdc Adc IB 7.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 200 1.15 W W/C C TJ, Tstg - 65 to + 200 MARKING DIAGRAM 2N588xG AYYWW MEX 2N588x G A YY WW MEX THERMAL CHARACTERISTICS Characteristic Symbol qJC Max Unit = Device Code x = 3, 4, 5, or 6 = Pb-Free Package = Assembly Location = Year = Work Week = Country of Origin Thermal Resistance, Junction-to-Case 0.875 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data. Units and conditions differ on some parameters and re-registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 1 March, 2006 - Rev. 11 Publication Order Number: 2N5883/D 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) PD, POWER DISSIPATION (WATTS) II I I IIIIIIIIIII II I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I III I IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII I II I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (Note 2) (TC = 25C unless otherwise noted) Characteristic Collector-Emitter Sustaining Voltage (Note 3) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Symbol Min 60 80 - - - - - - - - - Max - - Unit Vdc 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5984, 2N5886 VCEO(sus) ICEO 2.0 2.0 1.0 1.0 10 10 mAdc Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) ICEX 2N5883, 2N5885 2N5884, 2N5886 2N5883, 2N5885 2N5884, 2N5886 mAdc ICBO 2N5883, 2N5885 2N5884, 2N5886 1.0 1.0 1.0 mAdc mAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 25 Adc, VCE = 4.0 Vdc) hFE 35 20 4.0 - - - - - 100 - Collector-Emitter Saturation Voltage (Note 3) (IC = 15 Adc, IB = 1.5 Adc) (IC = 25 Adc, IB = 6.25 Adc) Base-Emitter Saturation Voltage (Note 3) Base-Emitter On Voltage (Note 3) VCE(sat) 1.0 4.0 2.5 1.5 Vdc Vdc Vdc (IC = 25 Adc, IB = 6.25 Adc) VBE(sat) VBE(on) (IC = 10 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (Note 4) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 4.0 - - - MHz pF - 2N5883, 2N5884 2N5885, 2N5886 Cob hfe 1000 500 - Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz) 20 SWITCHING CHARACTERISTICS Rise Time Fall Time tr tf - - - 0.7 1.0 0.8 ms ms ms Storage Time (VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) ts 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| * ftest. 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating http://onsemi.com 2 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) VCC -30 V 3.0 TO SCOPE tr 20 ns TURN-ON TIME RL +2.0 V 0 tr 20 ns -11 V 10 to 100 ms t, TIME ( s) DUTY CYCLE 2.0% VCC RL +9.0 V 0 RB -11 V tr 20 ns 10 to 100 ms 10 -30 V 3.0 TO SCOPE tr 20 ns 10 RB 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.3 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) tr TJ = 25C IC/IB = 10 VCC = 30 V VBE(off) = 2 V TURN-OFF TIME td VBB +7.0 V DUTY CYCLE 2.0% FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 3. Turn-On Time Figure 2. Switching Time Equivalent Test Circuits 1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) qJC(t) = r(t) qJC qJC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response 100 50 20 10 dc 1 ms 5 ms 500 ms 5.0 2.0 1.0 0.5 0.2 0.1 1.0 TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5883, 2N5885 2N5884, 2N5886 2.0 3.0 5.0 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 200C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPERES) Figure 5. Active-Region Safe Operating Area http://onsemi.com 3 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 10 7.0 5.0 3.0 t, TIME ( s) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.3 0.5 0.7 tf ts 3000 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) ts TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 2000 C, CAPACITANCE (pF) Cob Cib 1000 700 500 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 20 30 300 0.1 0.2 Cob 50 100 Cib tf 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn-Off Time PNP DEVICES 2N5883 and 2N5884 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 25C -55 C 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.3 0.5 0.7 25C Figure 7. Capacitance NPN DEVICES 2N5885 and 2N5886 TJ = 150C VCE = 4.0 V VCE = 4.0 V TJ = 150C -55 C 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 30 Figure 8. DC Current Gain Figure 9. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 2.0 A 1.2 5.0 A 10 A 20 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 2.0 A 5.0 A 10 A 20 A 1.2 0.8 0.8 0.4 0 0.01 0.4 0.02 0.05 0.1 0.5 0.2 1.0 IB, BASE CURRENT (AMPERES) 2.0 5.0 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, COLLECTOR CURRENT (AMPERES) Figure 10. Collector Saturation Region Figure 11. Collector Saturation Region http://onsemi.com 4 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2.0 TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 2.0 TJ = 25C 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.4 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4 V 0.4 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.8 0.8 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) Figure 12. "On" Voltages Figure 13. "On" Voltages ORDERING INFORMATION Device 2N5883 2N5883G 2N5884 2N5884G 2N5885 2N5885G 2N5886 2N5886G Package TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) 100 Units / Tray TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) Shipping http://onsemi.com 5 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) TQ M Y M U V 2 L G 1 -Y- H B DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 -Q- 0.13 (0.005) M TY M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 2N5883/D |
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